| Growth Method |
VGF |
| Orientation |
（100）±0.5° （311）A,B±0.5° (111）A,B±0.5° |
| Size (mm) |
50.8~100 |
| Thickness (μm) |
350±25~625±25 |
| TTV (μm) |
≤4 |
| Warp (μm) |
≤10 |
| Surface |
Side1:Polished Side2：Etched |
| Conduction Type |
N-type(S,Sn Dopant) |
P-type(Zn dopant) |
SI-type (Fe doped ) |
| EPD(Ave cm2) |
≤100~5000 |
≤5000 |
1500～5000 |
| Mobility(cm2/v.s) |
(1.0~5)×103 |
50~100 |
≥1000 |
| (300K) Resistivity (Ω·cm） |
N/A |
N/A |
>1.0×107 |
| (300K) Carrier Concentration (cm-3) |
(0.5~4.0)×1018 |
N/A |
| Package |
Packaged in individual containers in a class 100 clean room environment. |
