| Growth Method
|
VGF |
| Orientation
|
（100）±0.5° （311）A,B±0.5° (111）A,B±0.5° |
| Size (mm)
|
50.8~150 |
| Thickness (μm)
|
350±25~675±25 |
| TTV (μm)
|
≤4 |
| Warp (μm)
|
≤10 |
| Surface
|
Side1:Polished Side2：Polished |
| Conduction Type
|
N-type(Si Dopant) |
P-type(Zn dopant) |
SI-type Undoped |
| EPD(Ave cm2)
|
≤100~5000 |
3000~5000 |
1500~5000 |
| Mobility(cm2/v.s)
|
(1.0~2.5)×103 |
(1.0~2.5)×103 |
＞5000 |
| (300K) Resistivity (Ω·cm）
|
N/A |
N/A |
>1.0×107 |
| (300K) Carrier Concentration (cm-3)
|
(0.5~4.0)×1018 |
N/A |
| Package
|
Packaged in individual containers in a class 100 clean room environment. |
