標準スペック
| Growth Method | VGF | ||||
|---|---|---|---|---|---|
| Orientation | （100）±0.5° （311）A,B±0.5° (111）A,B±0.5° | ||||
| Size (mm) | 50.8~100 | ||||
| Thickness (μm) | 350±25~625±25 | ||||
| TTV (μm) | ≤4 | ||||
| Warp (μm) | ≤10 | ||||
| Surface | Side1:Polished Side2：Etched | ||||
| Conduction Type | N-type(S,Sn Dopant) | P-type(Zn dopant) | SI-type (Fe doped ) | ||
| EPD(Ave cm2) | ≤100~5000 | ≤5000 | 1500～5000 | ||
| Mobility(cm2/v.s) | (1.0~5)×103 | 50~100 | ≥1000 | ||
| (300K) Resistivity (Ω·cm） | N/A | N/A | >1.0×107 | ||
| (300K) Carrier Concentration (cm-3) | (0.5~4.0)×1018 | N/A | |||
| Package | Packaged in individual containers in a class 100 clean room environment. | ||||
InPエピウエハー （1310 nm 2.5G FP-B LASER DIODE EPI-WAFER ）
• Key Features
MOCVD epitaxy
3 Inch
Narrow radiant beam angle
High uniformity & Reliability
2.5Gb/s High-speed ratio application for EPON transceiver
Epitaxy Structure
P-InGaAs Contact
p-InGaAsP Intergrade
p-InP Cladding
p-InGaAsP Etch stop
p-InP Spacer
p-Cladding
AlGaInAs Waveguide
AlGaInAs MQWs
AlGaInAs Waveguide
n-AlGaInAs Cladding
n-InP Cladding
n-InGaAsP Waveguide
n-InP Cladding
n-InP Buffer
3-inch n-type InP Substrate (100)±0.2º [with high precision OF, (0-1-1)±0.02º
